| PART |
Description |
Maker |
| M52S32162A-10BIG M52S32162A-10TIG M52S32162A-7.5BI |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L161 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
ETC
|
| M52S16161A M52S16161A-8BG M52S16161A-8TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| T431616D T431616D-5C T431616D-5CG T431616D-5S T431 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| T431616D T431616E |
(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT
|
| M12L16161A-6T M12L16161A-8T M12L16161A-5.5T M12L16 |
CONNECTOR ACCESSORY
512K x 16Bit x 2Banks Synchronous DRAM 12k × 16Bit的X 2Banks同步DRAM
|
Electronic Theatre Controls, Inc.
|
| M52S32162A-10TG |
1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
| KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M52S32321A-7.5BIG M52S32321A-10BIG M52S32321A-6BIG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IS42VM16200D-75BLI IS42VM16200D-6BLI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM
|
Integrated Silicon Solu...
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
